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Battery

Nexperia and Aurobay Partner to Advance GaN and SiC Power Semiconductors for EVs

Power semiconductor manufacturer Nexperia is collaborating with Aurobay Technologies, a joint venture between Renault and Geely's Horse Powertrain, to research next-generation gallium nitride (GaN) and silicon carbide (SiC) devices for electric and hybrid powertrains. This partnership aims to integrate Nexperia's expertise in advanced semiconductor materials with Aurobay's powertrain system knowledge, enhancing the efficiency and performance of electrified vehicles.

September 11, 2026·Charged EVs·Nexperia
Charging

New GaN Technology Boosts High-Voltage EV Charging Efficiency

Power Integrations has introduced its PowiGaN gallium nitride (GaN) technology, now rated for an industry-leading 2,200 volts. This advancement allows for more efficient power conversion in demanding applications like ultra-fast EV charging infrastructure, pushing the boundaries of what's possible in high-voltage systems.

August 12, 2026·Charged EVs·Power Integrations
Charging

Infineon's Bidirectional GaN Switches Promise More Efficient EV Onboard Charging

Infineon is spotlighting its new automotive-qualified CoolGaN™ bidirectional switches, designed to improve the efficiency and simplify the architecture of electric vehicle onboard chargers. These advanced components utilize proprietary Gate Injection Transistor (GIT) technology to enable high-performance, single-stage charging systems, promising more robust and integrated solutions for future EVs.

August 12, 2026·Charged EVs·Infineon
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