Fraunhofer IAF Unveils GaN-Based 800V Bidirectional Charger Prototype

Researchers at the Fraunhofer Institute for Applied Solid State Physics and their project partners have demonstrated an 800-volt bidirectional off-board EV charger utilizing gallium nitride power electronics. The GaN-based module is designed to achieve higher efficiency and power density compared to conventional silicon-based systems. The development could help accelerate faster, more compact DC fast-charging and vehicle-to-grid hardware for high-voltage electric vehicles.